vhu4?1/4 v6 d mc74vhc1gu04 v6 d 1 3 2 4 5 sot?23/tsop?5/sc?59 dt suffix case 483 the mc74vhc1gu04 is an advanced high speed cmos unbuffered inverter fabricated with silicon gate cmos technology. it achieves high speed operation similar to equivalent bipolar schottky ttl while maintaining cmos low power dissipation. this device consists of a single unbuffered inverter. in combination with others, or in the mc74vhcu04 hex unbuffered inverter, these devices are well suited for use as oscillators, pulse shapers, and in many other applications requiring a high?input impe dance amplifier. for digital applications, the mc74vhc1g04 or the mc74vhc04 are recommended. the internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable outpu t. the mc74vhc1gu04 input structure provides protection when voltages up to 7 v are applied, regardless of the supply voltage. thi s allows the mc74vhc1gu04 to be used to interface 5 v circuits to 3 v circuits. high speed: t pd = 2.5 ns (typ) at v cc = 5 v low power dissipation: i cc = 2 ma (max) at t a = 25c power down protection provided on inputs balanced propagation delays pin and function compatible with other standard logic families chip complexity: fets = 105; equivalent gates = 26 sc?70/sc?88a/sot?353 df suffix case 419a 1 3 2 4 5 marking diagrams pin 1 d = date code pin 1 d = date code figure 1. pinout (top view) figure 2. logic symbol pin assignment 1nc 2 in a 3 gnd 4 out y 5v cc function table inputs ou tput ay lh hl ordering information see detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. unbuffered inverter
vhu4?2/4 mc74vhc1gu04 recommended operating conditions symbol parameter min max unit v cc dc supply voltage 2.0 5.5 v v in dc input voltage 0.0 5.5 v v out dc output voltage 0.0 v cc v t a operating temperature range ? 55 + 125 c t r ,t f input rise and fall time v cc = 3.3 0.3 v 0 no limit ns/v v cc = 5.0 0.5 v 0 no limit device junction temperature versus time to 0.1% bond failures junction t ime, time, temperature c hours years 80 1,032,200 117.8 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 normalized failure rate figure 3. failure rate vs. time junction temperature 1 1 10 100 1000 maximum ratings symbol parameter value unit v cc dc supply voltage ? 0.5 to + 7.0 v v in dc input voltage ? 0.5 to +7.0 v v out dc output voltage v cc =0 ? 0.5 to +7.0 v high or low state ?0.5 to v cc + 0.5 i ik input diode current ?20 ma i ok output diode current v out < gnd; v out > v cc +20 ma i out dc output current, per pin + 25 ma i cc dc supply current, v cc and gnd +50 ma p d power dissipation in still air sc?88a, tsop?5 200 mw ja thermal resistance sc?88a, tsop?5 333 c/w t l lead temperature, 1 mm from case for 10 s 260 c t j junction temperature under bias + 150 c t stg storage temperature ?65 to +150 c v esd esd withstand voltage human body model (note 2) >2000 v machine model (note 3) > 200 charged device model (note 4) n/a i latch?up latch?up performance above v cc and below gnd at 125c (note 5) 500 ma 1. maximum ratings are those values beyond which damage to the device may occur. exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. functional operation under absolute?maximum?rated conditions is not implied. functional operation should be restricted to the recommended operating conditions. 2. tested to eia/jesd22?a114?a 3. tested to eia/jesd22?a115?a 4. tested to jesd22?c101?a 5. tested to eia/jesd78 time, years
vhu4?3/4 dc electrical characteristics v cc t a = 25 c t a < 85 c ?55c < t a < 125c symbol parameter test conditions (v) min typ max min max min max unit v ih minimum high?level 2.0 1.7 1.7 1.7 v input voltage 3.0 2.4 2.4 2.4 4.5 3.6 3.6 3.6 5.5 4.4 4.4 4.4 v il maximum low?level 2.0 0.3 0.3 0.3 v input voltage 3.0 0.6 0.6 0.6 4.5 0.9 0.9 0.9 5.5 1.1 1.1 1.1 v oh minimum high?level v in = v ih or v il 2.0 1.9 2.0 1.9 1.9 v output voltage i oh = ? 50 a 3.0 2.9 3.0 2.9 2.9 v in = v ih or v il 4.5 4.4 4.5 4.4 4.4 v in = v ih or v il i oh = ?4 ma 3.0 2.58 2.48 2.34 i oh = ?8 ma 4.5 3.94 3.80 3.66 v ol maximum low?level v in = v ih or v il 2.0 0.0 0.1 0.1 0.1 v output voltage i ol = 50 a 3.0 0.0 0.1 0.1 0.1 v in = v ih or v il 4.5 0.0 0.1 0.1 0.1 v in = v ih or v il i ol = 4 ma 3.0 0.36 0.44 0.52 i ol = 8 ma 4.5 0.36 0.44 0.52 i in maximum input v in = 5.5 v or gnd 0 to5.5 0.1 1.0 1.0 a leakage current i cc maximum quiescent v in = v cc or gnd 5.5 2.0 20 40 a supply current mc74vhc1gu04 ac electrical characteristics c load = 50 pf, input t r = t f = 3.0 ns t a = 25 c t a < 85 c ?55c vhu4?4/4 mc74vhc1gu04 *includes all probe and jig capacitance figure 5. test circuit device ordering information device nomenclature mc74vhc1gu04dft1 mc 74 vhc1g u04 df t1 sc?70/sc?88a/ 178 mm (7 in) sot?353 3000 unit mc74vhc1gu04dft2 mc 74 vhc1g u04 df t2 sc?70/sc?88a/ 178 mm (7 in) sot?353 3000 unit mc74vhc1gu04dft4 mc 74 vhc1g u04 df t4 sc?70/sc?88a/ 330 mm (13 in) sot?353 10,000 unit mc74vhc1gu04dtt1 mc 74 vhc1g u04 dt t1 sot?23/tsops/ 178 mm (7 in) sc?59 3000 unit MC74VHC1GU04DTT3 mc 74 vhc1g u04 dt t3 sot?23/tsops/ 330 mm (13 in) sc?59 10,000 unit device order number circuit indicator temp range identifier technology device function package suffix tape & reel suffix package type (name/sot#/ common name) tape and reel size figure 4. switching waveforms
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